5SHY3545L0016 3BHB020720R0002 3BHE019719R0101 GVC736BE101 集成栅极整流晶闸管 IGCT技术

5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101

But again we are all aware of a new revolution takingplace in the area of high power semiconductors and itsapplications. New high power semiconductors likeHVIGBTs (High Voltage Insulated Gate Bipolar Tran-sistor) and the new emerging IGCT (Integrated GateCommutated Thyristor) are getting available for theuser (Linder at al [1]). Especially in the field of highpower applications (0.5 MVA up to several 100 MVA)the concept of the IGCT has the potential to offer thefollowing significant advantages in comparison to allother today available turn-off devices:− lowest costs per MVA− lowest losses per MVA− lowest parts count per MVA and− highest reliability per MVA.Due to this advantages is must be expected, that theIGCT will continue to find fast its place in all high powerapplications.

5SHY3545L0016 3BHB020720R0002 3BHE019719R0101 GVC736BE101 集成栅极整流晶闸管 IGCT技术

Typical applications will be− Medium voltage adjustable speed drives− High dynamic rolling mill drives− railway interties− high power traction− variable speed power generation− high voltage DC transmission− Custom Power applications like− dynamic voltage restorers− active filters− energy storage systems− FACTS applications like− unified power flow controller− static Var compensatorsIn the field of high power electronics one important keytechnology, which is inherently offered by the IGCT, isthe cost-efficient and robust series connection of turn-off semiconductors (Steimer et al [2]). This series con-nection is either needed to reach the targeted mediumor high voltages levels or it is needed to reach thehigher power levels.The first breakthrough of the IGCT technology hastaken place mid of 1996 with the successful commis-sioning of the first high power application with seriesconnected IGCT devices of the 1stgeneration.

5SHY3545L0016 3BHB020720R0002 3BHE019719R0101 GVC736BE101 集成栅极整流晶闸管 IGCT技术

Thisfirst 100MVA railway intertie (Boeck et al [3]) will bepresented in detail in this paper. The excellent opera-tional experience since mid of 1996 will be explained.Additionally the future potential for innovation with theuse of the now available 2ndgeneration of IGCTs willbe discussed.